DMN2009USS-13
Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMN2009USS-13
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2 W 20 V Continuous Drain Current (ID):12.1 A 34 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 2 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 12.1 A |
| Gate Charge | 34 nC |
| Drain to Source Resistance | 12 mΩ |
| Gate to Source Voltage (Vgs) | -12 V, 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 500 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 538
Distributors
pcbx
pcbxUnit Price$0.38814
Ext.Price$0.38814
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.38814 | $0.38814 |
| 10 | $0.33427 | $3.34270 |
| 25 | $0.29546 | $7.38650 |
| 50 | $0.26115 | $13.05750 |
| 100 | $0.23083 | $23.08300 |
| 300 | $0.21165 | $63.49500 |
| 500 | $0.19407 | $97.03500 |
| 1000 | $0.17526 | $175.26000 |
| 3000 | $0.15723 | $471.69000 |
| 5000 | $0.14106 | $705.30000 |